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    STUDIA PHYSICA - Issue no. 1 / 2002  
         
  Article:   EFFECT OF DEPOSITION PRESSURE ON THE STRUCTURAL AND ELECTRIC PROPERTIES OF BI:2201 THIN FILMS.

Authors:  A.V. POP, G. ILONCA, MARIANA POP, R. DELTOUR.
 
       
         
  Abstract:  Epitaxial Bi:2201 thin films were deposited on SrTiO3 (100) substrates using an inverted magnetron sputtering method. The influence of sputtering gas pressure on the structural properties were studied by X-ray diffraction(XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). Optimal deposition conditions for superconducting films with smooth film surface and high epitaxial quality were obtained. Electrical resistance measurements function of temperature shows a metal-insulator transition for low deposition pressures.  
         
     
         
         
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