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    STUDIA PHYSICA - Ediţia nr.1 din 2002  
         
  Articol:   CHARGE CARRIERS LIFETIME DISTRIBUTION FOR CDSE EPITAXIAL LAYERS.

Autori:  GEORGETA CERBANIC, I. BURDA, S. SIMON. 		 
       
         
  Rezumat:  The study of lifetimes regarding the recombination of non-equilibrium carriers and their kinetics is essential in order to explain the recombination mechanisms in semiconductors. The recombination kinetic and lifetime’s values in CdSe epitaxial layers are the target of this paper. CdSe layers have been deposited on (0001) mica substrates by vapour epitaxial method. The epitaxial layers contain defects that induce gap states and specific recombination kinetics. The lifetimes were determined by Photoconductive frequency-resolved spectroscopy (PCFRS) a usual method for such measurements. The obtained lifetime spectra show, in all studied samples, that are present three types of recombinations mechanisms: lifetime 1 is due to bulk band-to-band recombination, lifetime 2 to recombination associated with chemical impurities and 3 to recombination associated with structural defects. The lifetime measured as a function of the substrate temperature denotes a complex correlation between the crystal perfection and the growth temperature.  
         
     
         
         
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