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    STUDIA CHEMIA - Ediţia nr.2 din 2011  
         
  Articol:   EFFECT OF CATALYST LAYER THICKNESS ON GROWTH OF CVD DIAMOND .

Autori:  FATEMEH SHAHSAVARI, MAHMOOD GHORANNEVISS, ZAHRA KHALAJ, MIRCEA V. DIUDEA. 		 
       
         
  Rezumat:  Tungsten Nanocrystalline Diamond (NCD) films were grown on silicon substrates by Hot Filament Chemical Vapor Deposition (HFCVD) method using three different catalyst layer thicknesses. At first, the silicon substrates are ultrasonically cleaned in acetone; ethanol and demonized water for 15 minutes in each step to remove organic contaminants, then gold layers were deposited on silicon substrate by DC magnetron sputtering. Nitrogen gas 80 Sccm was introduced into HFCVD chamber for 40 minutes and the growing process were done in a mixture of CH4/H2 for 75 minutes. Crystal structure investigations were carried out by X-ray diffraction (XRD) measurements for deposited films. The XRD spectra of the NCD films demonstrated different diffraction peaks for different catalyst layer thicknesses that confirmed the presence of crystalline diamond. Morphology of the diamond films were investigated by scanning electron microscopy. The thickness of the gold nanolayer of each substrate was measured by DEKTAK surface profile measuring system.

Keywords: Nanocrystalline diamond films, Catalyst, Hot filament CVD, Etching. 

 
         
     
         
         
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